2SC3869 datasheet(1/3 Pages) PANASONIC

No. de pieza	2SC3869

Descripción Electrónicos	Silicon NPN triple diffusion type

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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Power Transistors

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

500

400

7

10

5

1.5

35

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

2SC3869

Silicon NPN triple diffusion planar type

For high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 500V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 2A

IC = 2A, IB = 0.4A

VCE = 10V, IC = 0.5A, f = 1MHz

IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,

VCC = 150V

min

400

15

8

typ

15

max

100

1.0

1.5

0.7

2.0

0.3

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

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2SC3869 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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