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ISC1862 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza ISC1862
Descripción Electrónicos  isc Silicon NPN RF Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISC1862 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademar
1
isc Silicon NPN RF Transistor
ISC1862
DESCRIPTION
·
Collector Current :IC= 100mA
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 12V(Min)
·
High gain:
︱
S21e ︱ 2 = 11 dB (typical) ( IC=20mA,f=1GHz)
·
Gain bandwidth product:
fT = 7 GHZ (typical) (IC=20mA)
APPLICATIONS
·
Designed for VHF, UHF and CATV high frequency
wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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