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STPS20H100CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza STPS20H100CT
Descripción Electrónicos  High Voltage Power Schottky Rectifier
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STPS20H100CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
High Voltage Power Schottky Rectifier
STPS20H100CT
FEATURES
·
Plastic material used carriers Underwriter Laboratory
·
Metal silicon junction, majority carrier conduction
·
Low Power Loss,high Efficiency
·
Guard ring for overvoltage protection
·
High Surge Capability,High Current Capability
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
IF(RMS)
RMS Forward current
30
A
IF(AV)
Average Rectified Forward
Current Tc=160℃
per diode
per device
10
20
A
IFSM
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
tp=10 ms sinusoidal
250
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
dv/dt
Voltage Rate of Change (Rated VR)
10000
V/μs


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