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ISCD18106 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza ISCD18106
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCD18106 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Darlington Power Transistor
ISCD18106
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)-1*
Collector-Emitter Saturation Voltage
IC= -2A; IB=- 8mA
-2.0
V
VCE(sat)-2*
Collector-Emitter Saturation Voltage
IC= -4A; IB=- 40mA
-3.0
V
VBE(sat)*
Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
-4.0
V
VBE(on)*
Base-Emitter On Voltage
IC=-2A; VCE=-3V
-2.8
V
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-100
V
ICBO
Collector Cutoff Current
VCB=- 50V; IE= 0
-20
uA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2
mA
hFE-1*
DC Current Gain
IC=-0.5A; VCE= -3V
500
hFE-2*
DC Current Gain
IC= -2A; VCE=-3V
1K
12K
hFE-3*
DC Current Gain
IC=- 4A; VCE=-3V
200
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
200
pF
fT
Current-Gain—Bandwidth Product
IC= -0.75A; VCE= -10V
25
MHz
*:Pulse test PW≤300us,duty cycle≤2%



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