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MPMD200B120RH Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

No. de pieza MPMD200B120RH
Descripción Electrónicos  NPT & Rugged Type 1200V IGBT Module
PDF  7 Pages
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Fabricante Electrónico  MGCHIP [MagnaChip Semiconductor.]
Página de inicio  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MPMD200B120RH Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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March 2013.Version 3.0
MagnaChip Semiconductor Ltd.
2
Electrical Characteristics of IGBT @T
C =25
oC(unless otherwise specified)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Collector-Emitter Breakdown Voltage
BVCES
IC = 1mA, VGE = 0V
1200
-
-
V
Gate Threshold Voltage
VGE(th)
VCE = VGE, IC = 2mA
4.5
-
6.5
Collector Cut-Off Current
ICES
VCE = 1200V, VGE = 0V
-
-
2
mA
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
-
±500
nA
Collector-Emitter saturation voltage
VCE(sat)
VGE = 15V,
IC=200A
TC=25℃
-
2.8
3.3
V
TC=100℃
-
3.4
-
V
Dynamic Characteristics
Total Gate Charge
Qg
VCC = 600V, IC = 200A,
VGE = ±15V
-
790
-
nC
Gate-Emitter Charge
Qge
-
100
-
Gate-Collector Charge
Qgc
-
470
-
Input Capacitance
Cies
VCE = 30V, VGE = 0V,
f = 1.0MHz
-
8876
-
pF
Output Capacitance
Coes
-
977
-
Reverse Transfer Capacitance
Cres
-
330
--
Turn-On Delay Time
td(on)
V
CC
= 600V, I
C
=200A,
V
GE
=±15V,
R
G
= 4.7
Ω, Inductive Load
-
135
-
ns
Rise Time
tr
-
60
-
Turn-Off Delay Time
td(off)
-
450
-
Fall Time
tf
-
70
-
Turn on Switching
Loss
Eon
-
11.0
-
mJ
Turn off Switching
Loss
Eoff
-
8.0
-
mJ
Total Switching
Loss
Ets
-
19.0
-
mJ
Short Circuit Withstand Time
Tsc
Vcc = 600V, VGE = ±15V
RG = 4.7Ω @ Tc = 100℃
10
-
-
us
Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified)
Diode Forward Voltage
VFM
IF=200A
TC=25℃
-
2.9
3.5
V
TC=100℃
-
2.3
-
Diode Reverse Recovery Time
trr
IF =20A,
VR=600V,
di/dt = -400A/us
TC=25℃
-
130
-
ns
TC=100℃
250
Diode Peak Reverse
Recovery Current
Irr
TC=25℃
-
8
-
A
TC=100℃
-
18
-
Diode Reverse
Recovery Charge
Qrr
TC=25℃
-
520
-
nC
TC=100℃
-
2250
-



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