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M36LLR8760 Datasheet(PDF) 13 Page - STMicroelectronics

No. de pieza M36LLR8760
Descripción Electrónicos  128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36LLR8760 Datasheet(HTML) 13 Page - STMicroelectronics

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M36L0R7050T0, M36L0R7050B0
Table 7. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDDF Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±1
µA
IDD1
Supply Current
Asynchronous Read (f=6MHz)
EF = VIL, GF = VIH
10
15
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
7
16
mA
8 Word
10
18
mA
16 Word
13
20
mA
Continuous
18
25
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
21
25
mA
Continuous
22
27
mA
IDD2
Supply Current
(Reset)
RPF = VSS ± 0.2V
25
70
µA
IDD3
Supply Current (Standby)
EF = VDDF ± 0.2V
25
70
µA
IDD4
Supply Current (Automatic
Standby)
EF = VIL, GF = VIH
25
70
µA
IDD5
(1)
Supply Current (Program)
VPPF = VPPH
815
mA
VPPF = VDDF
10
20
mA
Supply Current (Erase)
VPPF = VPPH
815
mA
VPPF = VDDF
10
20
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
20
35
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
32
47
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
EF = VDDF ± 0.2V
25
70
µA
IPP1
(1)
VPPF Supply Current (Program)
VPPF = VPPH
25
mA
VPPF = VDDF
0.2
5
µA
VPPF Supply Current (Erase)
VPPF = VPPH
25
mA
VPPF = VDDF
0.2
5
µA
IPP2
VPPF Supply Current (Read)
VPPF ≤ VDDF
0.2
5
µA
IPP3
(1)
VPPF Supply Current (Standby)
VPPF ≤ VDDF
0.2
5
µA



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