MMRF2007N datasheet(5/17 Pages) NXP

No. de pieza	MMRF2007N

Descripción Electrónicos	RF LDMOS Wideband Integrated Power Amplifiers

PDF	17 Pages

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Fabricante Electrónico	NXP [NXP Semiconductors]

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MMRF2007N MMRF2007GN

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

820

Gps

IMD

f, FREQUENCY (MHz)

Figure 4. Two--Tone Broadband Performance

@Pout = 35 Watts Avg.

--32

--27

--28

--29

--30

840

860

880

900

920

940

960

980

--31

VDD1 =28 Vdc,VDD2 =25 Vdc,IDQ1(A+B) =60 mA

IDQ2(A+B) = 550 mA, Pout =35 W (Avg.)

200 kHz Tone Spacing

Figure 5. Intermodulation Distortion Products

versus Two--Tone Spacing

TWO--TONE SPACING (MHz)

--60

--10

--20

--30

--50

100

--40

IM3--U

IM3--L

IM5--U

IM5--L

IM7--L

IM7--U

PAE

Figure 6. Power Gain, Power Added Efficiency and

Intermodulation Distortion Products versus

Average Output Power

Pout, OUTPUT POWER (WATTS)

IMD

--60

--10

--20

--40

--30

--50

Gps

PAE

VDD1 =28 Vdc,VDD2 =25 Vdc,IDQ1(A+B) =60 mA

IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz

VDD1 =28 Vdc,VDD2 =25 Vdc,Pout = 71 W (PEP)

IDQ1(A+B) =60 mA, IDQ2(A+B) = 550 mA

Two--Tone Measurements

(f1 + f2)/2 = Center Frequency of 900 MHz

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