OD-850WHT datasheet(1/4 Pages) OPTODIODE

No. de pieza	OD-850WHT

Descripción Electrónicos	High Temperature GaAlAs IR Emitters

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Fabricante Electrónico	OPTODIODE [OptoDiode Corp]

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An ITW Company

From Deep UV to Mid-IR

Revision July 13, 2018

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High Temperature GaAlAs IR Emitters

OD-850WHT

FEATURES

• High Optical Output

• 850 nm Peak Emission

• Hermetically Sealed TO-46 Package

• Wide Emission Angle to Cover a Large Area

• Extended Operating Temperature Range

• No Internal Coatings

• No Derating or Heat Sink Required to 80 °C

Parameters

Test Conditions

Min

Typ

Max

Units

Total Power Output, Po

IF = 100 mA

19

26

mW

Peak Emission Wavelength, λP

IF = 20 mA

850

nm

Spectral Bandwidth at 50 %, Δλ

IF = 20 mA

40

nm

Half Intensity Beam Angle, θ

IF = 20 mA

80

Deg

Forward Voltage, VF

IF = 100 mA

1.6

2

Volts

Reverse Breakdown Voltage, VR

IR = 10 µA

5

30

Volts

Rise Time

IFP = 20 mA

20

nsec

Fall Time

IFP = 20 mA

20

nsec

Parameters

Units

Power Dissipation1

200 mW

Continuous Forward Current

100 mA

Peak Forward Current (10 µs, 200 Hz)2

300 mA

Reverse Voltage

5 Volts

Lead Soldering Temperature (1/16" from case for 10 sec)

260 °C

Parameters

Units

Storage and Operating Temperature Range

-65 °C to 150 °C

Maximum Junction Temperature

150 °C

Thermal Resistance, RTHJA1

400 °C/W Typical

Thermal Resistance, RTHJA2

135 °C/W Typical

Electro-Optical Characteristics at 25 °C

Absolute Maximum Ratings at 25°C

Thermal Parameters

1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads.

2 Air circulating at a rapid rate to keep case temperature at 25 °C.

1 Derate per thermal derating curve above 25 °C.

2 Derate linearly above 25 °C

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OD-850WHT Datasheet(PDF) 1 Page - OptoDiode Corp

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