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BAV116WS Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza BAV116WS
Descripción Electrónicos  SURFACE MOUNT LOW LEAKAGE DIODE
PDF  5 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BAV116WS Datasheet(HTML) 2 Page - Diodes Incorporated

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BAV116WS
Document number: DS35981 Rev. 4 - 2
2 of 5
www.diodes.com
January 2017
© Diodes Incorporated
BAV116WS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
85
V
RMS Reverse Voltage
VR(RMS)
60
V
Forward Continuous Current (Note 5)
IFM
215
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0ms
@ t = 1.0s
IFSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
200
mW
Thermal Resistance Junction to Ambient Air (Note 5)
RJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
85
V
IR = 100µA
Forward Voltage
VF
0.9
1.0
1.1
1.25
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Leakage Current (Note 6)
IR
5.0
80
nA
nA
VR = 75V
VR = 75V, TJ = +150°C
Total Capacitance
CT
1.5
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
tRR
3.0
µs
IF = IR = 10mA,
IRR = 0.1 x IR, RL = 100Ω
Notes:
5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/package- outlines.html.
6. Short duration pulse test used to minimize self-heating effect.



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