PSS9012 datasheet(3/9 Pages) PHILIPS

3 / 9 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

20 V PNP general purpose transistors

PSS9012 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

175

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −35 V; IE =0

−−−100

VCB = −35 V; IE = 0; Tj = 150 °C −−−50

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −1 V; IC = −500 mA

−−

hFE

DC current gain

VCE = −1 V; IC = −50 mA

PSS9012G

112

−

166

PSS9012H

144

−

202

VCEsat

collector-emitter saturation

voltage

IC = −100 mA; IB = −10 mA

−−60

−250

IC = −500 mA; IB = −50 mA

−−230

−600

VBEsat

base-emitter saturation

voltage

IC = −500 mA; IB = −50 mA

−−1

−1.2

VBEon

base-emitter turn on voltage

VCE = −1 V; IC = −100mA

−−760

−1000

collector capacitance

VCB = −6 V; IE =Ie =0;

f = 1 MHz

−

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