GC01MPS12-252 datasheet(2/7 Pages) GENESIC

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GC01MPS12-252 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc.

No. de pieza	GC01MPS12-252

Descripción Electrónicos	Silicon Carbide Power Schottky Diode

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	GENESIC [GeneSiC Semiconductor, Inc.]

Página de inicio	http://www.genesicsemi.com/

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2 / 7 page

GC01MPS12-252

1200 V SiC MPS™ Diode

Feb 2018 Rev1.1

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

IF = f(VF,Tj); tP = 300 µs

Figure 1: Typical Forward Characteristics

IR = f(VR,Tj)

Figure 3: Typical Reverse Characteristics

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

IF = f(VF,Tj); tP = 300

Figure 1: Typical Forward Characteristics

Figure 2: Typical High Current Forward

Characteristics

Ptot = f(Tj)

Figure 3: Typical Reverse Characteristics

Figure 4: Power Derating Curve

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

Page 2 of 6

= 300 µs

Figure 2: Typical High Current Forward

Characteristics

Power Derating Curve

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