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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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PI4884 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PI4884 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  Philips Semiconductors PI4884 TrenchMOS™ logic level FET Product data Rev. 02 — 12 April 2002 2 of 12 9397 750 09583 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 °C - 30 V VGS gate-source voltage - ±20 V ID drain current Tsp =25 °C; Figure 2 and 3 -12 A IDM peak drain current Tsp =25 °C; pulsed; Figure 3 -45 A Ptot total power dissipation Tsp =25 °C; Figure 1 - 2.5 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current Tsp =25 °C - 12 A |
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