TSML3710 datasheet(3/8 Pages) VISHAY

No. de pieza	TSML3710

Descripción Electrónicos	GaAs/GaAlAs Infrared Emitting Diode in SMT Package

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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VISHAY

TSML3710

Document Number 81075

Rev. 3, 06-Jun-03

Vishay Semiconductors

www.vishay.com

Figure 3. Pulse Forward Current vs. Pulse Duration

Figure 4. Forward Current vs. Forward Voltage

Figure 5. Forward Voltage vs. Ambient Temperature

100

1000

10000

0.01

0.10

1.00

10.00

100.00

t p - Pulse Duration ( ms )

14335

tp /T = 0.01

0.05

0.2

0.5

1.0

0.1

0.02

VF - Forward Voltage(V)

13600

10 1

10 0

10 2

10 3

10 4

t p = 100 s

tp/ T = 0.001

0.7

0.8

0.9

1.0

1.1

1.2

1020 3040 5060 7080 90 100

Tamb – Ambient Temperature ( °C )

16848

IF = 1 mA

Figure 6. Radiant Intensity vs. Forward Current

Figure 7. Radiant Power vs. Forward Current

Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

I F - Forward Current ( mA )

15903

10 3

10 1

10 2

10 4

10 0

0.1

100

IF - Forward Current ( mA )

94 8740

103

101

102

104

100

0.1

1000

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

–10 0 10203040 5060708090 100

Tamb – Ambient Temperature ( °C )

16849

IF = 20 mA

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