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MMBT4124 Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza MMBT4124
Descripción Electrónicos  25V NPN SMALL SIGNAL TRANSISTOR
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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MMBT4124 Datasheet(HTML) 2 Page - Diodes Incorporated

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MMBT4124
Document number: DS30105 Rev. 13- 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT4124
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
310
mW
(Note 6)
350
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
403
°C/W
(Note 6)
357
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
350
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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