CDBJSC5650-G datasheet(2/3 Pages) COMCHIP

2 / 3 page

Electrical Characteristics (

)

at TA=25°C unless otherwise noted

Parameter

Conditions

Symbol

Typ

Max

Unit

Typical Characteristics (

)

CDBJSC5650-G

Page 2

Total capacitance

Total capacitive charge

Forward voltage

VR = 0V , TJ = 25°C , f = 1 MHZ

µA

VR = 400V , TJ = 150°C

1.7

100

IF = 5 A , TJ = 25°C

IF = 5 A , TJ = 175°C

VR = 650V , TJ = 25°C

VR = 650V , TJ = 175°C

VR = 200V , TJ = 25°C , f = 1 MHZ

1.35

Reverse current

QC = ∫

C(V) dv

VR = 400V , TJ = 25°C , f = 1 MHZ

1.55

430

42.5

QW-BSC04

REV:A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Silicon Carbide Power Schottky Diode

Reverse Voltage, VR (V)

Fig.4 - Capacitance vs. Reverse Voltage

100

200

250

500

400

0.01

0.1

100

1000

Fig.2 - Reverse Characteristics

150

300

350

450

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

1.0

4.0

2.0

1.6

2.4

0.4

2.0

3.0

5.0

1.2

0.8

TJ=25°C

Reverse Voltage, VR (V)

0.04

0.16

200

400

800

0.08

0.12

100

300

600

500

700

0.06

0.10

0.14

0.02

T=175°C

T=125°C

TJ=25°C

TJ=75°C

Case Tempature, TC (°C)

Fig.3 - Current Derating

150

175

125

100

10% Duty

30% Duty

50% Duty

70% Duty

D.C.

TJ=175°C

TJ=125°C

TJ=75°C

CDBJSC5650-G Datasheet(PDF) 2 Page - Comchip Technology

CDBJSC5650-G Datasheet(HTML) 2 Page - Comchip Technology

Html Pages

1 2 3

Datasheet Descarga

Enlace URL