CDBDSC3650-G datasheet(2/2 Pages) COMCHIP

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Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Unit

Electrical Characteristics (at TA=25°C, unless otherwise noted)

Total capacitive charge

Total capacitance

Conditions

220

181

Parameter

Max.

Symbol

Min.

Forward voltage

IF = 3A, Tj = 25°C

1.7

2.5

IF = 3A, Tj = 175°C

Typ.

1.4

1.8

Reverse current

μA

200

VR = 650V, Tj = 25°C

VR = 650V, Tj = 175°C

100

VR = 400V, Tj = 150°C

QC = ∫

C(V) dv

VR = 0V, Tj = 25°C, f = 1MHZ

VR = 200V, Tj = 25°C, f = 1MHZ

VR = 400V, Tj=25°C, f=1MHZ

22.5

20.5

RATING AND CHARACTERISTIC CURVES (CDBDSC3650-G)

Silicon Carbide Power Schottky Diode

Reverse Voltage, VR (V)

Fig.4 - Capacitance vs. Reverse Voltage

100

200

160

0.01

0.1

100

1000

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

2.0

1.5

2.5

0.5

1.0

TJ=25°C

TJ=75°C

T =125°C

T =175°C

Reverse Voltage, VR (V)

Fig.2 - Reverse Characteristics

0.010

0.040

200

400

800

0.020

0.030

100

300

600

500

700

0.015

0.025

0.035

0.005

T =175°C

T =125°C

TJ=25°C

TJ=75°C

120

140

180

Case Tempature, TC (°C)

Fig.3 - Current Derating

150

175

125

100

10% Duty

30% Duty

50% Duty

70% Duty

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