FZT853_17 datasheet(4/7 Pages) DIODES

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FZT853

Document Number DS33175 Rev. 6 - 2

4 of 7

www.diodes.com

March 2017

FZT853

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

200

300

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

200

300

—

IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

100

120

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

8.1

—

IE = 100µA

Collector Cut-Off Current

ICBO

—



µA

VCB = 150V

VCB = 150V, TA = +100°C

Collector Cut-Off Current

ICER

—



µA

VCE = 150V, RB ≤ 1kΩ

VCE = 150V, TA = +100°C

Emitter Cut-Off Current

IEBO

—

VEB = 6V

DC Current Gain (Note 9)

hFE

100

200

—

IC = 10mA, VCE = 2V

100

200

300

IC = 2A, VCE = 2V

100

—

IC = 4A, VCE = 2V

—

IC = 10A, VCE = 2V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

IC = 100mA, IB = 5mA

—

100



150

IC = 2A, IB = 100mA

—

250

340

IC = 5A, IB = 500mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

1,050

1,250

IC = 5A, IB = 500mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

900

1,100

IC = 5A, VCE = 2V

Current Gain-Bandwidth Product (Note 9)

—

130

—

MHz

IC = 100mA, VCE = 10V,

f = 50MHz

Output Capacitance

COBO

—

VCB = 10V, f = 1MHz

Switching Times

tON

—

IC = 1A, VCC = 10V,

IB1 = -IB2 = 100mA

tOFF

—

1,650

—

Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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