IXTP05N100 datasheet(4/5 Pages) IXYS

No. de pieza	IXTP05N100

Descripción Electrónicos	N-Channel Enhancement Mode Avalanche Rated

PDF	5 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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4 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA05N100HV IXTA05N100

IXTP05N100

Fig. 7. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 9. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 1A

I G = 1mA

Fig. 10. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 11. Forward-Bias Safe Operating Area @ TC = 25ºC

0.01

0.1

100

1,000

VCE - Volts

100µs

1ms

RDS(on) Limit

TJ = 150ºC

TC = 25ºC

Single Pulse

10ms

100ms

Fig. 12. Forward-Bias Safe Operating Area @ TC = 75ºC

0.01

0.1

100

1,000

VCE - Volts

100µs

1ms

RDS(on) Limit

TJ = 150ºC

TC = 75ºC

Single Pulse

10ms

100ms

25µs

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