2002 Nov 22

2

Philips Semiconductors

Product specification

NPN/PNP general purpose transistor

BC817DPN

FEATURES

• High current (500 mA)

• 600 mW total power dissipation

• Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

• General purpose switching and amplification

• Complementary driver

• Half and full bridge driver.

DESCRIPTION

NPN/PNP transistor pair in a SOT457 (SC-74) plastic

package.

MARKING

TYPE NUMBER

MARKING CODE

BC817DPN

N4

PINNING

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

handbook, halfpage

MAM445

13

2

TR1

TR2

6

4

5

Top view

12

3

65

4

Fig.1

Simplified outline (SOT457) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

45

V

collector current (DC)

500

mA

peak collector current

1

A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

45

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

500

mA

peak collector current

−

1A

peak base current

−

200

mA

total power dissipation

−

370

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

600

mW