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FCX558 Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza FCX558
Descripción Electrónicos  400V PNP HIGH VOLTAGE TRANSISTOR
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX558 Datasheet(HTML) 4 Page - Diodes Incorporated

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FCX558
Datasheet Number: DS33059 Rev. 7 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FCX558
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-400
-540
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-400
-510
-
V
IC = -1mA
Collector-Emitter Breakdown Voltage
BVCES
-400
-540
V
IC = -100µA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.2
-
V
IE = -100µA
Collector Cutoff Current
ICBO
-
<-1
-100
nA
VCB = -320V
Emitter Cutoff Current
ICES
-
<-1
-100
nA
VCE = -320V
Emitter Cutoff Current
IEBO
-
<-1
-20
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 11)
hFE
100
100
15
-
-
-
-
300
-
-
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
-
-
-
-
-0.2
-0.5
V
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
-
-
-0.9
V
IC = -50mA, IB = -5mA
Base-Emitter Turn-on Voltage (Note 11)
VBE(on)
-
-
-0.9
V
IC = -50mA, VCE = -10V
Transitional Frequency
fT
50
-
-
MHz
IE = -10mA, VCE = -20V
f = 20MHz
Output Capacitance
Cobo
-
-
5
pF
VCB = -20V, f = 1MHz,
Switching Times
ton
-
95
-
nS
IC = -50mA, VC = -100V
IB1 = -5mA, IB2 = -10mA
toff
1,600
Note:
11. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.



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