IXTY1R4N120P datasheet(4/5 Pages) IXYS

No. de pieza	IXTY1R4N120P

Descripción Electrónicos	N-Channel Enhancement Mode Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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4 / 5 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1R4N120PHV

IXTA1R4N120P

IXTY1R4N120P

IXTP1R4N120P

Fig. 7. Input Admittance

0.0

0.5

1.0

1.5

2.0

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

VGS - Volts

TJ = 125

- 40

Fig. 8. Transconductance

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

ID - Amperes

TJ = - 40

125

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125

TJ = 25

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 600V

I D = 0.7A

I G = 10mA

Fig. 11. Capacitance

100

1,000

10,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

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