IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT12N150

IXTH12N150

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

Note

1. Pulse test, t

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

8

13

S

C

iss

3720

pF

C

oss

V

240

pF

C

rss

80

pF

t

d(on)

26

ns

t

r

16

ns

t

d(off)

53

ns

t

f

14

ns

Q

g(on)

106

nC

Q

gs

V

17

nC

Q

gd

50

nC

R

thJC

0.14

C/W

R

thCS

TO-247

0.21

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

12

A

I

SM

Repetitive, Pulse Width Limited by T

JM

48

A

V

SD

I

1.4

V

t

rr

1.2

μs

I

RM

24.5

A

Q

RM

14.8

μC

I

V

TO-247 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate

2,4 - Drain

3 - Source

e

P

1

2

3

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC