BYW29F-200 datasheet(4/7 Pages) STMICROELECTRONICS

No. de pieza	BYW29F-200

Descripción Electrónicos	HIGH EFFICIENCY FAST RECOVERY DIODES

PDF	7 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BYW29/F/FP/G-200

4/7

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Tc=25°C

Tc=75°C

Tc=100°C

IM(A)

δ=0.5

Fig.5-2 : Non repetitive surge peak forward cur-

rent versus overload duration (TO-220FPAC,

ISOWATT220AC).

100

125

150

Tamb(°C)

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C:W

TO-220AC/D²PAK

TO-220FPAC

ISOWATT220AC

IF(av)(A)

Fig.6 : Average current versus ambient tempera-

ture. (

δ = 0.5)

100

1000

100

1000

dIF/dt(A/µs)

IF=8A

VR=100V

Tj=100°C

Qrr(nC)

Fig.8 : Reverse recovery charges versus dIF/dt

(90%confidence).

100

1000

VR(V)

F=1MHz

Vosc=30mV

Tj=25°C

C(pF)

Fig.7 : Junction capacitance versus reverse volt-

age applied (Typical values).

100

1000

dIF/dt(A/µs)

IF=8A

VR=100V

Tj=100°C

IRM(A)

Fig.9 : Peak reverse recovery current versus

dIF/dt (90% confidence).

0.00

0.25

0.50

0.75

1.00

1.25

1.50

100

125

150

Tj(°C)

IRM

QRR

IF=8A

VR=100V

Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]

Fig.10 : Dynamic parameters versus junction tem-

perature.

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