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L9679P Datasheet(PDF) 248 Page - STMicroelectronics

No. de pieza L9679P
Descripción Electrónicos  Automotive advanced airbag IC for mid/high end applications
PDF  272 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9679P Datasheet(HTML) 248 Page - STMicroelectronics

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Electrical characteristics
L9679P
248/272
DocID029275 Rev 1
17.17.2
Squib leakage test (VRCM)
All electrical characteristics are valid for the following conditions unless otherwise noted:
-40 °C
 Ta  +95 °C, VINGOOD0  VIN  35 V, 3.14 ≤ CVDD ≤ 3.46
15
VLKG_SF
SFx leakage voltage source Design info
-1
-
18
V
16
RSQ_ACC
Squib resistance
measurement accuracy
After software calculation
All errors included
RSQ between 1.0 Ω and 10.0 Ω
With High Current Source
(40 mA)
-8%
-
+8
%
17
-
EMI input low-pass filter
Design Info
50
-
100
kHz
Table 57. Deployment drivers diagnostics - Squib resistance measurement (continued)
No
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 58. Squib Leakage Test (VRCM)
No
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1
VOUT_VRCM
Output Voltage on SF or
SR pins during Leakage
test
IOUT = 0 mA
-10%
2.5
+10%
V
2IOUT = 6.6 mA
1.9
-
2.5
V
3RLKG_GSG_TH
Detection threshold,
leakage to GND
Leakage detected if RLKG_GSG
≤ 1 kΩ and not detected if
RLKG_GSG ≥ 10 kΩ
Design Info
1
-
10
kΩ
4a
ILKG_GSQ_TH_L
Equivalent to resistance range
SYS_CTL(PD&VRCM_SEL) = 0
-25 °C ≤ Tj ≤ +150 °C
guaranteed by
design/characterization
-15.5
%
450
+15.5
%
μA
4b
Equivalent to resistance range
SYS_CTL(PD&VRCM_SEL) = 0
-40 °C ≤ Tj ≤ +150 °C
-17%
450
+15.5
%
μA
5ILKG_GSQ_TH_H
SYS_CTL(PD&VRCM_SEL) = 1 -15%
2
15%
mA
6
TFLT_LKG
Leakage to GND deglitch
filter time
-17
20
23
μs
7RLKG_BSQ_TH
Detection threshold,
leakage to battery
Leakage detected if RLKG_GSG
≤ 1 kΩ and not detected if
RLKG_GSG ≥ 10 kΩ
Design Info
1
-
10
kΩ
8a
ILKG_BSQ_TH
Equivalent to resistance range
-25 °C ≤ Tj ≤ +150 °C
guaranteed by
design/characterization
-12%
1.8
+15%
mA
8b
-40 °C ≤ Tj ≤ +150 °C
-17%
1.8
+15%
mA



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