MMBT4401_17 datasheet(2/2 Pages) DIOTEC

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MMBT4401

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 1 V

IC =

0.1 mA

1 mA

10 mA

150 mA

hFE

100

–

300

VCE = 2 V

IC =

500 mA

hFE

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VCEsat

–

0.40 V

0.75 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VBEsat

0.75 V

–

0.95 V

1.20 V

Collector-Base breakdown voltage – Kollektor-Basis Durchbruchspannung 2)

IC = 0.1 mA, E open

V(BR)BEO

60 V

–

Collector-Emitter breakdown voltage – Kollektor-Emitter Durchbruchspannung 2)

IC = 1 mA, B open

V(BR)CEO

40 V

–

Base-Emitter breakdown voltage – Basis-Emitter Durchbruchspannung 2)

IE = 0.1 mA, C open

V(BR)BEO

6 V

–

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 35 V, E open

ICBO

–

100 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V, C open

IEBO

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 20 mA, f = 100 MHz

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE =ie = 0, f = 1 MHz

CCBO

–

6.5 pF

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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