| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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-1101-R2 Reseller |
| Reseller | No. de pieza | Fabricante Electrónico | Descripción Electrónicos | Price | Qty. BuyNow | |
![]() DigiKey | 1110-1R2M-RC | Bourns Inc | FIXED IND 1.2UH 9A 3 MOHM TH RoHS : Compliant |
| 0 | |
| BF1101R,215 | NXP Semiconductors | RF MOSFET 5V SOT143R RoHS : Compliant | 0 | |||
| PM2110-1R2M-RC | Bourns Inc | FIXED IND 1.2UH 20.3A 2 MOHM SMD RoHS : Compliant |
| 0 | ||
| RMC1/10-1R2JTP | Kamaya Inc | RES 1.2 OHM 5% 1/8W 0805 RoHS : Compliant |
| 0 | ||
| BWLT003731101R2J00 | Pulse Electronics Corporation | FIXED IND 1.2UH 490 MOHM SMD |
| 0 | ||
| BWLT003731101R2K00 | Pulse Electronics Corporation | FIXED IND 1.2UH 490 MOHM SMD |
| 0 | ||
![]() Avnet Americas | BWLT003731101R2J00 | Pulse Electronics Corporation | Inductor Chip Unshielded Wirewound 1.2uH 5% 7.96MHz 20Q-Factor Ferrite 1.3A 1210 T/R - Tape and Reel (Alt: BWLT003731101R2J00) RoHS : Compliant |
| 0 | |
| BWLT003731101R2K00 | Pulse Electronics Corporation | Inductor Chip Unshielded Wirewound 1.2uH 10% 7.96MHz 20Q-Factor Ferrite 1.3A 1210 T/R - Tape and Reel (Alt: BWLT003731101R2K00) RoHS : Compliant |
| 0 | ||
| PM2110-1R2M-RC | Bourns Inc | - Trays (Alt: PM2110-1R2M-RC) RoHS : Compliant |
| 0 | ||
| 1110-1R2M-RC | Bourns Inc | - Bulk (Alt: 1110-1R2M-RC) RoHS : Compliant |
| 0 | ||
![]() RS | 1110-1R2M-RC | Bourns Inc | IND0.55X.66X.84IN,1.2UH20%9A, NON-SHDTH, BULK, BAG PACKAGING RoHS : Compliant |
| 0 | |
![]() TME | PM2110-1R2M-RC | Bourns Inc | Inductor: wire; SMD; 1.2uH; ±20%; Dim: 30.5x25.4x14.48mm; H: 14.48mm RoHS : Compliant |
| 75 | |
![]() Avnet Abacus | 1110-1R2M-RC | Bourns Inc | (Alt: 1110-1R2M-RC) RoHS : Compliant | 0 | ||
![]() Master Electronics | 1110-1R2M-RC | Bourns Inc | High Current RF Choke Bobbin Core 1.2uH 20% 1KHz Ferrite 9A 3mOhm DCR RDL RoHS : Compliant |
| 0 | |
| PM2110-1R2M-RC | Bourns Inc | General Purpose Inductor 1.2uH 20% 1 Element Iron-Core SMD 1210 RoHS : Compliant |
| 0 | ||
![]() Vyrian | BF1101R,215 | NXP Semiconductors | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 5,092 |
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