PTF191601 pdf, PTF191601 Descripción Electrónicos, PTF191601 Datasheet, PTF191601 view ::: ALLDATASHEET :::

No. de pieza	PTF191601

Descripción Electrónicos	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Tamaño del archivo	61.2 Kbytes

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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Número de pieza similar - PTF191601

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTF191601E	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16
Infineon Technologies A...	PTF191601F	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTF180101	310Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz 2004-02-03
Infineon Technologies A...	PTF180601	233Kb / 11P	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz 2004-05-03
TriQuint Semiconductor	AGR19045EF	331Kb / 10P	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19030EF	355Kb / 10P	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19060E	412Kb / 10P	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19090E	395Kb / 10P	90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19125E	395Kb / 10P	125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19180EF	438Kb / 9P	180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
Infineon Technologies A...	PTF180101S	209Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Rev. P03, 2007-03-01
Infineon Technologies A...	PTF191601F	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16