RJK03P7DPA pdf, RJK03P7DPA Descripción Electrónicos, RJK03P7DPA Datasheet, RJK03P7DPA view ::: ALLDATASHEET :::

No. de pieza	RJK03P7DPA

Descripción Electrónicos	MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

Tamaño del archivo	259.95 Kbytes

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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Número de pieza similar - RJK03P7DPA

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	RJK03P0DPA	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P0DPA-00-J5A	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA-00-J5A	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P9DPA	335Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	PBSS303PZ	172Kb / 14P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02-20 November 2009
SeCoS Halbleitertechnol...	SSG9435BDY	616Kb / 4P	-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
Renesas Technology Corp	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
	RJK1206JPD	96Kb / 7P	120 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJK0631JPR	99Kb / 7P	60 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJH60F4DPQ-A0	88Kb / 8P	600 V - 30 A - IGBT High Speed Power Switching
	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
Nexperia B.V. All right...	PBSS303PZ	285Kb / 15P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 - 20 November 2009