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No. de pieza	AG318

Descripción Electrónicos	Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches

Tamaño del archivo	214.46 Kbytes

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Fabricante Electrónico	MA-COM [M/A-COM Technology Solutions, Inc.]

Página de inicio	http://www.macomtech.com

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Número de pieza similar - AG318

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
M/A-COM Technology Solu...	AG312	488Kb / 18P	Design with PIN Diodes
Silver Telecom 2019	AG312	527Kb / 13P	Wireless Power Modules
M/A-COM Technology Solu...	AG314	473Kb / 70P	Principles, Applications and Selection of Receiving Diodes

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Texas Instruments	TIL318	277Kb / 1P	P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES
Siemens Semiconductor G...	BXY42	104Kb / 6P	HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)
Motorola, Inc	MRFG35010MT1	300Kb / 8P	Gallium Arsenide PHEMT
Motorola, Inc	MRFG35003M6T1	337Kb / 8P	GALLIUM ARSENIDE PHEMT
IXYS Corporation	DGS3-01AS	37Kb / 2P	Gallium Arsenide Schottky Rectifier
Kingbright Corporation	APL3015F3C	436Kb / 4P	F3 Made with Gallium Arsenide Infrared Emitting diodes.
List of Unclassifed Man...	TIES27	94Kb / 2P	GALLIUM ARSENIDE INFRARED-EMITTING DIODES
Freescale Semiconductor...	MRFG35010ANT1	260Kb / 12P	Gallium Arsenide PHEMT
Clairex Technologies, I...	CLE230	115Kb / 1P	High Power Aluminum Gallium Arsenide IREDs
NXP Semiconductors	MRFG35003N6A	260Kb / 11P	Gallium Arsenide PHEMT Rev. 2, 6/2009