TSHG5510 pdf, TSHG5510 Descripción Electrónicos, TSHG5510 Datasheet, TSHG5510 view ::: ALLDATASHEET :::

No. de pieza	TSHG5510

Descripción Electrónicos	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Tamaño del archivo	104.97 Kbytes

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

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Número de pieza similar - TSHG5510

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	TSHG5510	95Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	TSHG5510	93Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	TSHG5510	92Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	TSHG5510	95Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	TSHG5510	93Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	TSHG8200	101Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 02-Jul-09
	TSHG8400	101Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 02-Jul-09
	VSMG2700	137Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 03-Nov-09
	TSHG5510	95Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	VSMG2720	133Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 24-Sep-13
	TSHG8200	113Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11
	TSHG8400	104Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 03-Sep-13
	VSMG2720	144Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 15-Jul-2020
	TSHG8400	103Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 03-Sep-13
	TSHG5510	92Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 23-Aug-11