PTFB241402F pdf, PTFB241402F Descripción Electrónicos, PTFB241402F Datasheet, PTFB241402F view ::: ALLDATASHEET :::

No. de pieza	PTFB241402F

Descripción Electrónicos	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz

Tamaño del archivo	556.83 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

Logo

Número de pieza similar - PTFB241402F

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PTFB241402FV1R0	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTFB241402FV1R0XTMA1	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTFB241402FV1R250	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTFB241402FV1R250XTMA1	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTFB241402F	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PTFB241402F	810Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 04.1, 2016-06-15
	PTAC240502FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz Rev. 02.3, 2016-06-21
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
	PTAC240502FC	606Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
	PXAC241002FC	279Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
WOLFSPEED, INC.	PTAC240502FC_V1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Rev. 05, 2023-06-28