| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Hamamatsu Corporation |
S1226
|
313Kb / 3P |
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
|
|
S1227
|
147Kb / 4P |
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
|
|
S9840
|
84Kb / 4P |
High UV sensitivity CCD image sensor
|
|
C3901
|
209Kb / 6P |
Current output, high UV sensitivity, excellent linearity, low power consumption
|
Marktech Corporate |
MTPD4400D-1.4
|
1Mb / 2P |
Wide bandwidth and high spectral sensitivity in the UV
|
Advanced Photonix, Inc. |
SD0090-3111-185
|
232Kb / 3P |
The SD0090-3111-185 is a high sensitivity, low noise, 0.3 mm diameter active area InGaAs photodiode for detection at SWIR, NIR wavelengths for imaging and sensing applications.
|
|
SD0200-3111-011
|
207Kb / 3P |
The SD0200-3111-011 is a high sensitivity, low noise, 0.5 mm diameter active area InGaAs photodiode for detection at SWIR, NIR wavelengths for imaging and sensing applications
|
|
SD0003-3111-011
|
206Kb / 3P |
The SD0003-3111-011 is a high sensitivity, low noise, 0.06 mm diameter active area InGaAs photodiode for detection at SWIR, NIR wavelengths for imaging and sensing applications.
|
|
SD0008-3111-011
|
206Kb / 3P |
The SD0008-3111-011 is a high sensitivity, low noise, 0.1 mm diameter active area InGaAs photodiode for detection at SWIR, NIR wavelengths for imaging and sensing applications.
|
|
SD0008-3111-111
|
215Kb / 3P |
The SD0008-3111-111 is a high sensitivity, low noise, 0.1 mm diameter active area InGaAs photodiode for detection at SWIR, NIR wavelengths for imaging and sensing applications.
|
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