| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Motorola, Inc |
IRF840
|
146Kb / 2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
 NXP Semiconductors |
IRF840
|
60Kb / 7P |
PowerMOS transistor Avalanche energy rated
March 1999 Rev 1.000 |
 STMicroelectronics |
IRF840
|
93Kb / 8P |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
Aug-1998 |
 Fairchild Semiconductor |
IRF840
|
150Kb / 5P |
N-Channel Power MOSFETs, 8A, 450 V/500V
|
|
IRF840
|
911Kb / 10P |
500V N-Channel MOSFET
|