| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 New Jersey Semi-Conduct... |
VF30
|
91Kb / 1P |
Diffused Silicon Junction
|
 Vishay Siliconix |
VF30100C
|
167Kb / 5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08 |
|
VF30100C
|
165Kb / 6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VF30100C-E3
|
152Kb / 5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13 |
|
VF30100C-E3
|
178Kb / 6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
13-Dec-16 |