55410 pdf, 55410 Descripción Electrónicos, 55410 Datasheet, 55410 view ::: ALLDATASHEET :::

No. de pieza	55410

Descripción Electrónicos	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Tamaño del archivo	558.19 Kbytes

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Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Número de pieza similar - 55410

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Belden Inc.	55410	403Kb / 3P	PROFIBUS Data Single-Ended Cordset
ebm-papst	55410.70305	308Kb / 1P	Crossflow Blower
	55410.81051	308Kb / 1P	Crossflow Blower
	55410.81390	308Kb / 1P	Crossflow Blower
	55410.91161	308Kb / 1P	Crossflow Blower

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	NE6500496	37Kb / 6P	4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC	NE6501077	37Kb / 6P	10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Sanyo Semicon Device	LA4278	74Kb / 6P	10 W 2-Channel Power Amplifier
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE55410GR	317Kb / 15P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
	NES1823S-45	239Kb / 10P	GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET 2004
	NES1823S-90	242Kb / 10P	GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET 2004