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No. de pieza	NE3512S02

Descripción Electrónicos	HETERO JUNCTION FIELD EFFECT TRANSISTOR

Tamaño del archivo	270.66 Kbytes

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Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Número de pieza similar - NE3512S02

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	NE3512S02	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3512S02-T1C	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3512S02-T1D	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
California Eastern Labs	NE3514S02	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Labs	NE3515S02-A	415Kb / 9P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NE3210S01	197Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
	NE32484A	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE32500	199Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1996
	NE32900	181Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1997
	NE32984D	207Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1995
	NE34018	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
	NE38018	236Kb / 13P	Hetero Junction Field Effect transistor 2003
	NE21283A	718Kb / 12P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1990