GTRA260502M pdf, GTRA260502M Descripción Electrónicos, GTRA260502M Datasheet, GTRA260502M view ::: ALLDATASHEET :::

No. de pieza	GTRA260502M

Descripción Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT

Tamaño del archivo	205.5 Kbytes

Html View	1 2 3 4 5

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Número de pieza similar - GTRA260502M

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
WOLFSPEED, INC.	GTRA260502M	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26
WOLFSPEED, INC.	GTRA260502M-V1-R3K	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Infineon Technologies A...	GTVA220701FA	862Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-08-18
	GTVA221701FA	616Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-07-27
	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29
Cree, Inc	GTVA104001FA	314Kb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz
	GTVA126001EC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTRA360502M	250Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT
	GTRA214602FC	321Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT