KMM5361205C2W pdf, KMM5361205C2W Descripción Electrónicos, KMM5361205C2W Datasheet, KMM5361205C2W view ::: ALLDATASHEET :::

No. de pieza	KMM5361205C2W

Descripción Electrónicos	1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh

Tamaño del archivo	289.58 Kbytes

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Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

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Número de pieza similar - KMM5361205C2W

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	KMM5361203C2W	280Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
Samsung semiconductor	KMM5361203C2WG	280Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	KMM5322204C2W	287Kb / 17P	2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
	KMM5361203C2W	280Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
	KMM5362203C2W	284Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
	KMM5362205C2W	296Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
	KMM5364003BSW	351Kb / 18P	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
	KMM5364003CK	286Kb / 17P	4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
	KMM5364003CSW	391Kb / 20P	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
	KMM5364005BSW	393Kb / 19P	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
	KMM5364005CK	277Kb / 15P	4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
	KMM5364005CSW	415Kb / 21P	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V