| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Stanson Technology |
ST2315SRG
|
218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2318SRG
|
221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST3401SRG
|
212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
|
STC6332
|
421Kb / 9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
|
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STP6308
|
420Kb / 6P |
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
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STP7401
|
461Kb / 6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STP9437
|
375Kb / 6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Shenzhen Huazhimei Semi... |
HM1P10MR
|
763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
HM609BK
|
2Mb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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