| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 NXP Semiconductors |
BSH301
|
36Kb / 5P |
Dual N-channel enhancement mode MOS transistor
1999 Apr 06 |
|
PHN205
|
88Kb / 12P |
Dual N-channel enhancement mode MOS transistor
1997 Oct 22 |
 Seme LAB |
2N7002DCSM
|
20Kb / 2P |
DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
|
 Renesas Technology Corp |
RJK0381DPA
|
127Kb / 7P |
Built in SBD N Channel Power MOS High Speed Power Switching
|
|
RJK03P0DPA
|
400Kb / 11P |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
|
RJK03P6DPA
|
241Kb / 11P |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
|
RJK03P9DPA
|
335Kb / 11P |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
|
RJK03R4DPA
|
287Kb / 11P |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
 SHENZHEN FUMAN ELECTRON... |
TC4953ES
|
169Kb / 3P |
11V P channel enhanced dual MOS FET
|
 Shenzhen Huazhimei Semi... |
HM9836
|
405Kb / 7P |
Built-in 90V MOS
|