BN1F4M pdf, BN1F4M Descripción Electrónicos, BN1F4M Datasheet, BN1F4M view ::: ALLDATASHEET :::

No. de pieza	BN1F4M

Descripción Electrónicos	The BN1F4M is designed for use in medium speed switching circuit.

Tamaño del archivo	133.69 Kbytes

Html View	1 2

Fabricante Electrónico	NEC [NEC]

Página de inicio	http://www.nec.com/

Logo

Número de pieza similar - BN1F4M

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	BN1F4N	130Kb / 2P	The BN1F4N is esiged for use in medium speed switching circuit.
NEC	BN1F4Z	84Kb / 4P	on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
Renesas Technology Corp	BN1F4Z	239Kb / 6P	COMPOUND TRANSISTOR 2002

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	KA3361B	78Kb / 4P	THE KA3361B IS DESIGNED FOR USE IN FM DUAL CONVERSION COMMUNICATION.
NEC	AA1F4M	129Kb / 2P	The AA1F4M is designed for use medium speed switching circuit.
	BN1A4M	136Kb / 2P	The BN1A4M is designed for use in medium speed switching circuit.
	BN1F4N	130Kb / 2P	The BN1F4N is esiged for use in medium speed switching circuit.
E-Tech Electronics LTD	GBAV151	312Kb / 2P	The GBAV151 is designed for ultra high speed switching application
	GBAV152	313Kb / 2P	The GBAV152 is designed for ultra high speed switching application
	GDMBD2004	225Kb / 2P	The GDMBD2004 is designed for ultra high speed switching
	GP202K	173Kb / 2P	The GP202K is designed for ultra high speed switching.
	GPN2222A	140Kb / 3P	The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
	GPN2907A	230Kb / 2P	The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications