Description:

The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Device Dissipation (TA = +25°C), PD 350mW . . . . . . . . . . . . . . . . . .

Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C

Total Device Dissipation (TC = +25°C), PD 1.0W . . . . . . . . . . . . . . . . . . . .

Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg –55 . . . . . . . . . . . . . . . . . . . ° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . 125°C/W

Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . 357°C/W