Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Samsung semiconductor |
M378T3354BG3-CD5
|
466Kb / 22P |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
M368L1624DTM
|
354Kb / 22P |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
M368L3223ETM-CC5
|
287Kb / 19P |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
Cypress Semiconductor |
CY7S1061G
|
1Mb / 23P |
16-Mbit (1 M words 횞 16 bit) Static RAM with PowerSnooze??and ECC
|
Sanken electric |
M368L1624FTM
|
445Kb / 25P |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC
|
Cypress Semiconductor |
CY7C1061G
|
563Kb / 18P |
16-Mbit (1 M words 횞 16 bit) Static RAM with Error-Correcting Code (ECC)
|
S34MS01G1
|
1Mb / 71P |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
SPANSION |
S34ML01G200TFI000
|
2Mb / 68P |
1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 I/O and 3V VCC
|
Samsung semiconductor |
M366S3354BTS
|
379Kb / 22P |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
Cypress Semiconductor |
S34ML08G1
|
865Kb / 20P |
8 Gb, 1-bit ECC, x8 I/O, 3 V, VCC NAND Flash Memory for Embedded
|