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CGH35240F Datasheet (PDF) - Cree, Inc

CGH35240F Datasheet PDF - Cree, Inc
No. de pieza CGH35240F
Descarga  CGH35240F Descarga

Tamaño del archivo   1557.62 Kbytes
Page   12 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 240 W, 3100-3500 MHz, 50-ohm Input/

CGH35240F Datasheet (PDF)

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CGH35240F Datasheet PDF - Cree, Inc

No. de pieza CGH35240F
Descarga  CGH35240F Click to download

Tamaño del archivo   1557.62 Kbytes
Page   12 Pages
Fabricante Electrónico  CREE [Cree, Inc]
Página de inicio  http://www.cree.com/
Logo CREE - Cree, Inc
Descripción Electrónicos 240 W, 3100-3500 MHz, 50-ohm Input/

CGH35240F Datasheet (HTML) - Cree, Inc

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Número de pieza similar - CGH35240F

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
WOLFSPEED, INC.
CGH35240 WOLFSPEED-CGH35240 Datasheet
1Mb / 12P
   240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Rev. 4.0, 2022-6-28
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Descripción similar - CGH35240F

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
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Cree, Inc
CGH31240F CREE-CGH31240F Datasheet
2Mb / 12P
   240 W, 2700-3100 MHz, 50-ohm Input
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722Kb / 10P
   500 W, 2700 - 3100 MHz, 50-Ohm Input
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829Kb / 11P
   400 W, 2900 - 3500 MHz, 50-Ohm Input
CGH35060F2 CREE-CGH35060F2 Datasheet
1Mb / 11P
   60 W, 3100-3500 MHz, 28V, GaN HEMT
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NXP Semiconductors
NA-1429 PHILIPS-NA-1429 Datasheet
557Kb / 8P
   BLS6G3135-120 at 3100-3500 MHz
Rev. 2-28 April 2015
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Cree, Inc
CGHV59350 CREE-CGHV59350 Datasheet
3Mb / 12P
   350 W, 5200 - 5900 MHz, 50-Ohm Input
CGHV50200F CREE-CGHV50200F Datasheet
2Mb / 15P
   200 W, 4400 - 5000 MHz, 50-Ohm Input
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Microsemi Corporation
3135GN-280LV MICROSEMI-3135GN-280LV Datasheet
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   280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz
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Cree, Inc
CGHV37400F CREE-CGHV37400F Datasheet
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   400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
CGHV96050F1 CREE-CGHV96050F1 Datasheet
1Mb / 14P
   50 W, 7.9 - 9.6 GHz, 50-ohm, Input
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Acerca de Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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