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ISL6353 Datasheet (PDF) - Intersil Corporation

ISL6353 Datasheet PDF - Intersil Corporation
No. de pieza ISL6353
Descarga  ISL6353 Descarga
Tamaño del archivo   1286.59 Kbytes
Page   30 Pages
Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Descripción Electrónicos Multiphase PWM Regulator for VR12 DDR Memory Systems

ISL6353 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
ISL6353 Datasheet PDF - Intersil Corporation

No. de pieza ISL6353
Descarga  ISL6353 Click to download

Tamaño del archivo   1286.59 Kbytes
Page   30 Pages
Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Descripción Electrónicos Multiphase PWM Regulator for VR12 DDR Memory Systems

ISL6353 Datasheet (HTML) - Intersil Corporation


ISL6353 Detalles de producto

The ISL6353 is a three-phase PWM buck regulator controller for
VR12 DDR memory applications. The multi-phase implementation
results in better system performance, superior thermal
management, lower component cost and smaller PCB area.
The ISL6353 has two integrated power MOSFET drivers for
implementing a cost effective and space saving power
management solution.
The PWM modulator of the ISL6353 is based on Intersil’s Robust
Ripple Regulator™ (R3) technology. Compared with the traditional
multi-phase buck regulator, the R3 modulator commands variable
PWM switching frequency during load transients, achieving faster
transient response. R3 also naturally goes into pulse frequency
modulation operation in light load conditions to achieve higher light
load efficiency.
The ISL6353 is designed to be completely compliant with VR12
specifications. The ISL6353 has a serial VID (SVID) bus
communicating with the CPU. The output can be programmed for
1-, 2- or 3-phase interleaved operation. The output voltage and
power state can also be controlled independent of the serial VID
bus.
The ISL6353 has several other key features. It supports DCR
current sensing with a single NTC thermistor for DCR
temperature compensation or accurate resistor current sensing.
It also has remote voltage sense, adjustable switching frequency,
current monitor, OC/OV protection and power-good. Temperature
monitor and thermal alert is available too.

Features
• VR12 Serial Communications Bus
• Precision Voltage Regulation
- 5mV Steps with VID Fast/Slow Slew Rates
• Supports Two Current Sensing Methods
- Lossless Inductor DCR Current Sensing
- Precision Resistor Current Sensing
• Programmable 1, 2 or 3-Phase Operation
• Adaptive Body Diode Conduction Time Reduction
• Superior Noise Immunity and Transient Response
• Pin Programmable Output Voltage and Power State Mode
• Output Current Monitor and Thermal Monitor
• Differential Remote Voltage Sensing
• High Efficiency Across Entire Load Range
• Programmable Switching Frequency
• Resistor Programmable VBOOT, Power State Operation, SVID
Address Setting, IMAX
• Excellent Dynamic Current Balance Between Phases
• OCP/WOC, OVP, OT Alert, PGOOD
• Small Footprint 40 Ld 5x5 TQFN Package
• Pb-Free (RoHS Compliant)

Applications
• DDR Memory




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Acerca de Intersil Corporation


Intersil Corporation era una compañía de semiconductores estadounidenses que se especializó en el diseño y fabricación de circuitos integrados analógicos y de señal mixta de alto rendimiento.
La compañía fue fundada en 1967 y era conocida por su experiencia en gestión de energía, conversión de datos y tecnologías de radiofrecuencia (RF).
Los productos de Intersil se utilizaron en una amplia gama de aplicaciones, como la electrónica de consumo, industrial, telecomunicaciones y aeroespacial y defensa.
En 2016, Intersil fue adquirido por Renesas Electronics Corporation, una empresa de semiconductores japoneses.
La marca y la tecnología Intersil continúan desarrollándose y vendiendo como parte de la cartera de productos de Renesas.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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