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HIP2101IB Datasheet (PDF) - Intersil Corporation

HIP2101IB Datasheet PDF - Intersil Corporation
No. de pieza HIP2101IB
Descarga  HIP2101IB Descarga
Tamaño del archivo   410.39 Kbytes
Page   12 Pages
Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Descripción Electrónicos 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

HIP2101IB Datasheet (PDF)

Go To PDF Page Descarga Datasheet
HIP2101IB Datasheet PDF - Intersil Corporation

No. de pieza HIP2101IB
Descarga  HIP2101IB Click to download

Tamaño del archivo   410.39 Kbytes
Page   12 Pages
Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Descripción Electrónicos 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

HIP2101IB Datasheet (HTML) - Intersil Corporation


HIP2101IB Detalles de producto

The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.

Features
• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available (RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1Ω Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
• Supply Undervoltage Protection
• 3Ω Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile

Applications
• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters




Número de pieza similar - HIP2101IB

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Intersil Corporation
HIP2101IB INTERSIL-HIP2101IB Datasheet
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HIP2101IB INTERSIL-HIP2101IB Datasheet
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Descripción similar - HIP2101IB

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
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HIP2100IB INTERSIL-HIP2100IB Datasheet
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Renesas Technology Corp
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HIP2101 RENESAS-HIP2101 Datasheet
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Acerca de Intersil Corporation


Intersil Corporation era una compañía de semiconductores estadounidenses que se especializó en el diseño y fabricación de circuitos integrados analógicos y de señal mixta de alto rendimiento.
La compañía fue fundada en 1967 y era conocida por su experiencia en gestión de energía, conversión de datos y tecnologías de radiofrecuencia (RF).
Los productos de Intersil se utilizaron en una amplia gama de aplicaciones, como la electrónica de consumo, industrial, telecomunicaciones y aeroespacial y defensa.
En 2016, Intersil fue adquirido por Renesas Electronics Corporation, una empresa de semiconductores japoneses.
La marca y la tecnología Intersil continúan desarrollándose y vendiendo como parte de la cartera de productos de Renesas.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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