| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Renesas Technology Corp |
RJK03N0DPA
|
225Kb / 7P |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N1DPA
|
182Kb / 7P |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N4DPA
|
210Kb / 7P |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N5DPA
|
183Kb / 7P |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK0301DPB-02
|
136Kb / 7P |
30V, 60A, 2.8m廓 max. Silicon N Channel Power MOS FET Power Switching
|
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RJK03M1DPA
|
143Kb / 7P |
30V, 50A, 2.3m廓max. N Channel Power MOS FET High Speed Power Switching
|
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RJK03M3DPA
|
190Kb / 7P |
30V, 40A, 3.9m廓max. N Channel Power MOS FET High Speed Power Switching
|
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RJK03M4DPA
|
157Kb / 7P |
30V, 35A, 4.6m廓max. N Channel Power MOS FET High Speed Power Switching
|
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RJK03M5DPA
|
143Kb / 7P |
30V, 30A, 6.5m廓max. N Channel Power MOS FET High Speed Power Switching
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RJJ0315DPA
|
159Kb / 7P |
-30V, -35A, 5.9m廓max. P Channel Power MOS FET High Speed Power Switching
|