2SC5752 Datasheet(PDF) - California Eastern Labs

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2SC5752 Datasheet (PDF) - California Eastern Labs

2SC5752 Datasheet PDF - California Eastern Labs


No. de pieza	2SC5752

Descarga	2SC5752 Descarga

Tamaño del archivo	3842.57 Kbytes

Page	17 Pages

Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Descripción Electrónicos

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

2SC5752 Datasheet (PDF)

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2SC5752 Datasheet PDF - California Eastern Labs


No. de pieza	2SC5752

Descarga	2SC5752 Click to download

Tamaño del archivo	3842.57 Kbytes

Page	17 Pages

Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

Logo

Descripción Electrónicos	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

2SC5752 Datasheet (HTML) - California Eastern Labs

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2SC5752 Detalles de producto

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package

Número de pieza similar - 2SC5752

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5752	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC5752	224Kb / 22P	NPN SILICON RF TRANSISTOR 2001
NEC	2SC5752-T1	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC5752-T1	224Kb / 22P	NPN SILICON RF TRANSISTOR 2001
Renesas Technology Corp	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

Descripción similar - 2SC5752

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Siemens Semiconductor G...	BFP450	49Kb / 8P	NPN Silicon RF Transistor (For medium power amplifiers)
Panasonic Semiconductor	2SC4545	81Kb / 4P	For Medium Output Power Amplification
NEC	2SC5752	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
California Eastern Labs	NESG270034	349Kb / 11P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
Renesas Technology Corp	2SC5509	231Kb / 10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
Renesas Technology Corp	NESG2101M05	172Kb / 15P	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
California Eastern Labs	2SC5754	1Mb / 12P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION July 2001

Acerca de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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