2SC5336 Datasheet(PDF) - California Eastern Labs

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2SC5336 Datasheet (PDF) - California Eastern Labs

2SC5336 Datasheet PDF - California Eastern Labs


No. de pieza	2SC5336

Descarga	2SC5336 Descarga

Tamaño del archivo	1035.34 Kbytes

Page	7 Pages

Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

Logo

Descripción Electrónicos

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 Datasheet (PDF)

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2SC5336 Datasheet PDF - California Eastern Labs


No. de pieza	2SC5336

Descarga	2SC5336 Click to download

Tamaño del archivo	1035.34 Kbytes

Page	7 Pages

Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

Logo

Descripción Electrónicos	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 Datasheet (HTML) - California Eastern Labs

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2SC5336 Datasheet HTML 6Page - California Eastern Labs

2SC5336 Datasheet HTML 7Page - California Eastern Labs

2SC5336 Detalles de producto

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

FEATURES
• High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the NE85634 / 2SC3357

Número de pieza similar - 2SC5336

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336-A	137Kb / 2P	RF & Microwave device
	2SC5336-T1	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

Descripción similar - 2SC5336

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5337	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE856M02	63Kb / 7P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	2SC5337	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

Acerca de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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