Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
California Eastern Labs |
NX6352GP
|
1Mb / 6P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
Renesas Technology Corp |
NX6353EP
|
247Kb / 7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
NX6352GP
|
286Kb / 7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
NX6350GP
|
129Kb / 7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
|
NX6350EP
|
138Kb / 7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs |
NX6350GP
|
903Kb / 6P |
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
|
NX6350EP
|
1,013Kb / 6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
NX6353EP
|
714Kb / 6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
NX6351GP
|
938Kb / 6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6314EH
|
205Kb / 7P |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
|